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giftedviz.com July 16, 2018


Samsung Starts Producing First 512GB Universal Flash Storage

06 December 2017, 12:49 | Megan Pierce

The new 512GB eUFS package uses Samsung's latest 64-layer 512-gigabit V-NAND chips, and is said to provide "unparalleled storage capacity" and "outstanding performance for upcoming smartphones and tablets".

Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics says the following about company's vision in paving the way for mobile phones to exhibit higher levels of internal storage.

"The new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration", writes the Korean firm. That sort of content is becoming more popular as sharper displays and enhanced cameras are included on smartphones.

Even though Samsung is most well known for its flagship phones, it has a massive component business as well. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".

The new 512GB UFS increases the density of the 256GB eUFS storage from 48 layers to 64 layers and also includes a controller chip.

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The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life. The 512GB chip is able to read and write new data at 860MB per second and 255MB per second respectively, which Samsung claims is eight times faster than your average MicroSD card.

The UFS devices are said to be supreme in speed, reading up to 860 MB/s and writing at 255MB/s. To transfer a 5GB Full HD video clip to an SSD, it'd take just six seconds (eight times faster than what most microSD cards are capable of).

Samsung didn't say which of its upcoming new phones will get the 512GB eUFS first. However, if the company starts using this storage module, we may be facing the prospects of losing the microSD card slot.

Finally, Samsung noted that it intends to "steadily" increase production volume for its 64-layer 512Gb V-NAND chips, while continuing to expand its 256Gb V-NAND production.



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